Strain characterization of Hg1-xFexSe-layers by electron spin resonance

G. Hendorfer, W. Jantsch, W. Helzel, J. H. Li, Z. Wilamowski, T. Widmer, D. Schikora, K. Lischka

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

HgSe:Fe layers are grown by molecular-beam-epitaxy and investigated by high-resolution-x-ray-diffraction and electron paramagnetic resonance. The lattice mismatch between HgSe and ZnTe leads to the formation of strain in the HgSe layers which is, however, relaxed in all samples investigated. Nevertheless, by Electron paramagnetic resonance a strain field in HgSe is found which occurs due to the difference in the thermal expansion coefficients of ZnTe and HgSe, respectively. We thus show that iron can be used as a local probe to measure strains in HgSe. We correlate the fine structure parameter necessary to describe the EPR spectra with the strain in the layers.

Original languageEnglish
Pages (from-to)561-566
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 1
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 23 Jul 199528 Jul 1995

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