Simulation of plasma resonances in MOSFETs for THz-signal detection

Christoph Jungemann, K. Bittner, H. G. Brachtendorf

Research output: Chapter in Book/Report/Conference proceedingsConference contributionpeer-review

4 Citations (Scopus)

Abstract

We present simulations by the 2D drift-diffusion model of a quarter-micron NMOSFET at THz frequencies. The derivative of the current densities with respect to time is included in the model, which enables simulations of plasma oscillations. In contrast to the usual 1D transmission line models this approach includes all 2D effects of the device (parasitics, inhomogeneous channel, etc.). In the case of silicon the impact of plasma oscillations is found to be negligible due to the strong damping. With respect to numerics it is found that the backward differentiation formula based on trigonometric functions is very efficient for simulation of the periodic steady-state.

Original languageEnglish
Title of host publication2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages48-51
Number of pages4
ISBN (Electronic)9781467386098
DOIs
Publication statusPublished - 23 Mar 2016
Event2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016 - Vienna, Austria
Duration: 25 Jan 201627 Jan 2016

Publication series

Name2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

Conference

Conference2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
Country/TerritoryAustria
CityVienna
Period25.01.201627.01.2016

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