We present photoluminescence (PL) studies of Si:Er by means of high-resolution Fourier spectroscopy. By fitting crystal field parameters, we show that the dominant Er center in FZ Si is interstitial with cubic symmetry. This type of center is observed also in CZ material together with additional, non-cubic Er related centers, two of which contain one Er atom and most likely oxygen. The latter complexes exhibit 10 times higher PL yield. In EPR we identify electrically active centers which are related to substitutional Er.
|Number of pages||6|
|Journal||Materials Science Forum|
|Issue number||pt 2|
|Publication status||Published - 1994|
|Event||Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria|
Duration: 18 Jul 1993 → 23 Jul 1993