PL and EPR studies of Er-implanted FZ- and CZ-Si

H. Przybylinska, J. Enzenhofer, G. Hendorfer, M. Schoisswohl, L. Palmetshofer, W. Jantsch

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)

Abstract

We present photoluminescence (PL) studies of Si:Er by means of high-resolution Fourier spectroscopy. By fitting crystal field parameters, we show that the dominant Er center in FZ Si is interstitial with cubic symmetry. This type of center is observed also in CZ material together with additional, non-cubic Er related centers, two of which contain one Er atom and most likely oxygen. The latter complexes exhibit 10 times higher PL yield. In EPR we identify electrically active centers which are related to substitutional Er.

Original languageEnglish
Pages (from-to)715-720
Number of pages6
JournalMaterials Science Forum
Volume143-4
Issue numberpt 2
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: 18 Jul 199323 Jul 1993

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