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Optically active erbium centers in silicon
H. Przybylinska
, W. Jantsch
, Yu Suprun-Belevitch
, M. Stepikhova
, L. Palmetshofer
,
G. Hendorfer
, A. Kozanecki
, R. Wilson
, B. Sealy
Research output
:
Contribution to journal
›
Article
›
peer-review
227
Citations (Scopus)
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Keyphrases
Optically Active
100%
Erbium
100%
Er Complex
100%
Annealing Parameter
50%
Defect Type
50%
Annealing Conditions
50%
Axial Symmetry
50%
Exciton Binding Energy
50%
High Photoluminescence
50%
Excitation Power
50%
Residual Radiation
50%
Implantation Parameters
50%
Optically Active Defects
50%
Complex Center
50%
Radiation Defects
50%
Quenching Rate
50%
Crystal Field
50%
Non-radial
50%
Oxygen Complexes
50%
Engineering
Quenching Rate
100%
Crystal Field
100%
Exciton Binding Energy
100%
Optically Active Defect
100%
Material Science
Silicon
100%
Photoluminescence
100%
Erbium
100%