Optical characterization of growing thin films at hight temperatures by analysis of near infrared emissivity variations using CCD thermal imaging

Research output: Chapter in Book/Report/Conference proceedingsConference contribution

Abstract

Due to interference effects which occur during the growth of surface thin films, the resulting spectral emissivity varies continuously. It is shown in this paper, that these temporal variations of emissivity allow the determination of the complex index of refraction (i.e. optical constants n, k) of a thin absorbing film, without explicit knowledge of the optical constants of the substrate layer. In particular, this work presents results obtained by the analysis of the thermal radiation of a thin thermally grown iron-oxide film on a heated steel specimen (at approx. 400°C) measured by a standard CCD camera with a near infrared band-pass filter (~1μm).
Original languageEnglish
Title of host publicationProceedings of QIRT 2010
Publication statusPublished - 2010
Event10th Quantitative Infrared Thermography Conference - Quebec, Canada
Duration: 27 Jul 201030 Jul 2010
http://qirt2010.gel.ulaval.ca/

Conference

Conference10th Quantitative Infrared Thermography Conference
Country/TerritoryCanada
CityQuebec
Period27.07.201030.07.2010
Internet address

Fingerprint

Dive into the research topics of 'Optical characterization of growing thin films at hight temperatures by analysis of near infrared emissivity variations using CCD thermal imaging'. Together they form a unique fingerprint.

Cite this