On the local structure of optically active Er centers in Si

H. Przybylinska; G. Hendorfer; M. Bruckner; L. Palmetshofer; W. Jantsch

doi:10.1063/1.114066

On the local structure of optically active Er centers in Si

H. Przybylinska, G. Hendorfer, M. Bruckner, L. Palmetshofer, W. Jantsch

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Abstract

We report high resolution (<0.05 cm^-1) photoluminescence (PL) spectra of erbium implanted float-zone (FZ) and Czochralski grown (CZ) silicon. We show that the PL spectrum of cubic Er centers observed in CZ-Si annealed at 900°C is the dominant emission in FZ-Si for the same annealing conditions. We assign it to isolated, interstitial erbium. We observe also two other kinds of optically active Er centers with lower than cubic site symmetry: (i) O-related (found only in CZ Si) and (ii) those related to radiation defects. We conclude that coimplantation with light elements does not lead to the formation of Er-codopant complexes, but rather to Er forming complexes with implantation induced lattice defects.

Original language	English
Pages (from-to)	490
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.114066
Publication status	Published - 1995
Externally published	Yes

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title = "On the local structure of optically active Er centers in Si",

abstract = "We report high resolution (<0.05 cm-1) photoluminescence (PL) spectra of erbium implanted float-zone (FZ) and Czochralski grown (CZ) silicon. We show that the PL spectrum of cubic Er centers observed in CZ-Si annealed at 900°C is the dominant emission in FZ-Si for the same annealing conditions. We assign it to isolated, interstitial erbium. We observe also two other kinds of optically active Er centers with lower than cubic site symmetry: (i) O-related (found only in CZ Si) and (ii) those related to radiation defects. We conclude that coimplantation with light elements does not lead to the formation of Er-codopant complexes, but rather to Er forming complexes with implantation induced lattice defects.",

author = "H. Przybylinska and G. Hendorfer and M. Bruckner and L. Palmetshofer and W. Jantsch",

year = "1995",

doi = "10.1063/1.114066",

language = "English",

pages = "490",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - On the local structure of optically active Er centers in Si

AU - Przybylinska, H.

AU - Hendorfer, G.

AU - Bruckner, M.

AU - Palmetshofer, L.

AU - Jantsch, W.

PY - 1995

Y1 - 1995

N2 - We report high resolution (<0.05 cm-1) photoluminescence (PL) spectra of erbium implanted float-zone (FZ) and Czochralski grown (CZ) silicon. We show that the PL spectrum of cubic Er centers observed in CZ-Si annealed at 900°C is the dominant emission in FZ-Si for the same annealing conditions. We assign it to isolated, interstitial erbium. We observe also two other kinds of optically active Er centers with lower than cubic site symmetry: (i) O-related (found only in CZ Si) and (ii) those related to radiation defects. We conclude that coimplantation with light elements does not lead to the formation of Er-codopant complexes, but rather to Er forming complexes with implantation induced lattice defects.

AB - We report high resolution (<0.05 cm-1) photoluminescence (PL) spectra of erbium implanted float-zone (FZ) and Czochralski grown (CZ) silicon. We show that the PL spectrum of cubic Er centers observed in CZ-Si annealed at 900°C is the dominant emission in FZ-Si for the same annealing conditions. We assign it to isolated, interstitial erbium. We observe also two other kinds of optically active Er centers with lower than cubic site symmetry: (i) O-related (found only in CZ Si) and (ii) those related to radiation defects. We conclude that coimplantation with light elements does not lead to the formation of Er-codopant complexes, but rather to Er forming complexes with implantation induced lattice defects.

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U2 - 10.1063/1.114066

DO - 10.1063/1.114066

M3 - Article

AN - SCOPUS:36448998838

SN - 0003-6951

SP - 490

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

On the local structure of optically active Er centers in Si

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