Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection

C. Jungemann; T. Linn; K. Bittner; H. G. Brachtendorf

doi:10.1016/j.sse.2016.10.030

Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection

C. Jungemann, T. Linn, K. Bittner, H. G. Brachtendorf

Research Center Hagenberg

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Conventional silicon MOSFETs are used for THz detectors in order to facilitate fabrication of cost-efficient circuits with high integration density. Resistive mixers based on NMOSFETs are investigated by drift-diffusion simulations, which include the time derivative of the current densities usually neglected in TCAD codes. Different time-integration schemes are investigated for transient simulations and the modified backward differentiation formula is found to be the most CPU-efficient method for the periodic steady-state. By comparison with the Boltzmann transport equation it is shown that the drift-diffusion model can capture the salient aspects of transport in the THz range. The features of the device simulator are demonstrated by investigation of the current and voltage responsivity together with the noise-equivalent-power for a resistive mixer based on a quarter-micron NMOSFET.

Original language	English
Pages (from-to)	129-134
Number of pages	6
Journal	Solid-State Electronics
Volume	128
DOIs	https://doi.org/10.1016/j.sse.2016.10.030
Publication status	Published - 1 Feb 2017

Keywords

Drift-diffusion model
Plasma waves
Resistive mixer
THz detectors

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10.1016/j.sse.2016.10.030

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title = "Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection",

abstract = "Conventional silicon MOSFETs are used for THz detectors in order to facilitate fabrication of cost-efficient circuits with high integration density. Resistive mixers based on NMOSFETs are investigated by drift-diffusion simulations, which include the time derivative of the current densities usually neglected in TCAD codes. Different time-integration schemes are investigated for transient simulations and the modified backward differentiation formula is found to be the most CPU-efficient method for the periodic steady-state. By comparison with the Boltzmann transport equation it is shown that the drift-diffusion model can capture the salient aspects of transport in the THz range. The features of the device simulator are demonstrated by investigation of the current and voltage responsivity together with the noise-equivalent-power for a resistive mixer based on a quarter-micron NMOSFET.",

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AU - Jungemann, C.

AU - Linn, T.

AU - Bittner, K.

AU - Brachtendorf, H. G.

PY - 2017/2/1

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AB - Conventional silicon MOSFETs are used for THz detectors in order to facilitate fabrication of cost-efficient circuits with high integration density. Resistive mixers based on NMOSFETs are investigated by drift-diffusion simulations, which include the time derivative of the current densities usually neglected in TCAD codes. Different time-integration schemes are investigated for transient simulations and the modified backward differentiation formula is found to be the most CPU-efficient method for the periodic steady-state. By comparison with the Boltzmann transport equation it is shown that the drift-diffusion model can capture the salient aspects of transport in the THz range. The features of the device simulator are demonstrated by investigation of the current and voltage responsivity together with the noise-equivalent-power for a resistive mixer based on a quarter-micron NMOSFET.

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Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection

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Keywords

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