MBE growth of high mobility HgSe:Fe layers

We prepared for the first time iron doped HgSe layers and microstructures by molecular beam epitaxy (MBE). The layers were grown on ZnTe/GaAs-substrates. The structural quality of the layers was measured by high resolution X-ray diffraction (HRXD). The maximum of the full width at half maximum (FWHM) was obtained at about 0.35-0.4 μm, which represents a upper limit of the critical thickness in the HgSe/ZnTe-system. The electronic properties are investigated by Hall-effect measurements as well by Shubnikov-de Haas (SdH) measurements. These data show the excellent electronic properties of the HgSe:Fe layers. The highest measured mobility in our samples was 2.7^*10⁵ cm²/Vs at 4.2 Kelvin. The orientation dependence of the HgSe:Fe layers and microstructures in the magnetic field was compared. The HgSe:Fe layers of about 1.5 μm thickness show a decreasing SdH-amplitude when the magnetic field is rotated from a direction normal to the layer surface to a direction parallel to the surface, however they are still observable in all field orientations. In contrast to this fact, the SdH-amplitude of a HgSe:Fe microstructure with alternating 580angstrom HgSe:Fe and 730angstrom HgSe layers disappears completely when the angle between the magnetic field and the surface normal exceeds 35°.