TY - JOUR
T1 - Ion bombardment of C60
T2 - Raman study of amorphization and polymerization
AU - Palmetshofer, L.
AU - Kastner, J.
PY - 1995/3/1
Y1 - 1995/3/1
N2 - C60 fullerite films on Si substrates have been bombarded with H, He, C and Ar ions with energies between 60 and 600 keV and doses ranging from 1 × 1012 to 5 × 1016 cm-2. Raman scattering showed structural changes of the fullerite depending on the ion species, energy and dose. At low doses a new line at 1463 cm-1 in the Raman spectra indicates polymerization of C60. At higher doses a broad and asymmetric line between 1000 and 1700 cm-1 appears which is characteristic for amorphous carbon. The amorphization process is correlated with the nuclear energy deposition while electronic energy loss leads to polymerization of C60.
AB - C60 fullerite films on Si substrates have been bombarded with H, He, C and Ar ions with energies between 60 and 600 keV and doses ranging from 1 × 1012 to 5 × 1016 cm-2. Raman scattering showed structural changes of the fullerite depending on the ion species, energy and dose. At low doses a new line at 1463 cm-1 in the Raman spectra indicates polymerization of C60. At higher doses a broad and asymmetric line between 1000 and 1700 cm-1 appears which is characteristic for amorphous carbon. The amorphization process is correlated with the nuclear energy deposition while electronic energy loss leads to polymerization of C60.
UR - http://www.scopus.com/inward/record.url?scp=0009612373&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(94)00515-X
DO - 10.1016/0168-583X(94)00515-X
M3 - Article
AN - SCOPUS:0009612373
SN - 0168-583X
VL - 96
SP - 343
EP - 346
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 1-2
ER -