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Investigation of NiOx-based contacts on p-GaN
Birgit Plochberger
Research Center Linz
Research output
:
Contribution to journal
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Article
14
Citations (Scopus)
Overview
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Dive into the research topics of 'Investigation of NiOx-based contacts on p-GaN'. Together they form a unique fingerprint.
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Engineering
Electric Lines
100%
Magnetron
100%
Time-of-Flight
100%
Metallizations
100%
Ohmic Contacts
100%
Field-Emission Scanning Electron Microscopy
100%
Line Method
100%
Keyphrases
NiOx
100%
P-GaN
100%
Contact Resistance
42%
Annealing
28%
Contact Structure
28%
Transmission Electron Microscopy
14%
Metallization
14%
Auger Electron Spectroscopy
14%
Electrical Properties
14%
Oxygen Concentration
14%
Oxygen Content
14%
Circular Transmission
14%
GaN Surface
14%
Time-of-flight Secondary Ion Mass Spectrometry (ToF-SIMS)
14%
Annealing Treatment
14%
NiO NPs
14%
Contact Resistance Measurement
14%
Transmission Line Method
14%
Ohmic
14%
DC Reactive Magnetron Sputtering
14%
Field Emission Scanning Electron Microscopy (FE-SEM)
14%
Depth Profiling
14%
Metallic Layer
14%
Ohmic Contact
14%
Material Science
Contact Resistance
100%
Transmission Electron Microscopy
25%
Magnetron Sputtering
25%
Auger Electron Spectroscopy
25%
Secondary Ion Mass Spectrometry
25%
Field Emission Scanning Electron Microscopy
25%