Formation of air stable buried K-fulleride layers by ion implantation

J. Kastner, H. Kuzmany, L. Palmetshofer, K. Piplits

Research output: Contribution to journalArticlepeer-review


The formation process of buried K-fulleride layers by high dose implantation of 30 keV K+ at an implant temperature of 300°C has been studied as a function of dose. Raman scattering showed a transformation of the fullerene molecules to amorphous carbon (a-C) within the range of the implanted ions. At the elevated implant temperatures used most of the K diffuses into the depth where a doped layer is formed. The buried K-fulleride layer is stable on air due to a passivation by the a-C. The formation process is discussed on the basis of the K-C60 phase diagram and various thermodynamic processes like segregation, phase formation and diffusion.

Original languageEnglish
Pages (from-to)1469-1470
Number of pages2
JournalSynthetic Metals
Issue number1-3
Publication statusPublished - 15 Mar 1995
Externally publishedYes


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