Erbium related centers in CZ-silicon

W. Jantsch, H. Przybylinska, Yu Suprun-Belevich, M. Stepikhova, G. Hendorfer, L. Palmetshofer

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

CZ Si implanted with Er shows the same cubic crystal field splitting of the 1.54 μm luminescence as FZ-Si together with other, defect- and oxygen correlated Er complexes. The cubic centers exhibit somewhat shorter radiative life- and excitation times. The 100 times higher luminescence yield of CZ samples is thus attributed to the improved incorporation and to the passivation of recombination centers. The latter conclusion is supported by DLTS results which indicate complicated annealing behaviour.

Original languageEnglish
Pages (from-to)609-614
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 2
DOIs
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 23 Jul 199528 Jul 1995

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