CZ Si implanted with Er shows the same cubic crystal field splitting of the 1.54 μm luminescence as FZ-Si together with other, defect- and oxygen correlated Er complexes. The cubic centers exhibit somewhat shorter radiative life- and excitation times. The 100 times higher luminescence yield of CZ samples is thus attributed to the improved incorporation and to the passivation of recombination centers. The latter conclusion is supported by DLTS results which indicate complicated annealing behaviour.
|Number of pages||6|
|Journal||Materials Science Forum|
|Issue number||pt 2|
|Publication status||Published - 1995|
|Event||Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn|
Duration: 23 Jul 1995 → 28 Jul 1995