Electron paramagnetic resonance and Coulomb gap in HgSe:Fe

Z. Wilamowski, W. Jantsch, G. Hendorfer

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The temperature and concentration dependence of the EPR absorption due to the Fe3+ state in HgSe is shown to be consistent with a Coulomb gap in the defect density of states. The latter is a consequence of inter-ion Coulomb interaction which renders a correlated ground state with short-range order of the partially ionised resonant donors. Possible mechanisms for a decrease of both the mobility and the EPR intensity for very high iron concentrations in this ordered, glass-like state are discussed.

Original languageEnglish
Article number058
Pages (from-to)S266-S269
JournalSemiconductor Science and Technology
Issue number3 S
Publication statusPublished - 1990


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