Abstract
The temperature and concentration dependence of the EPR absorption due to the Fe3+ state in HgSe is shown to be consistent with a Coulomb gap in the defect density of states. The latter is a consequence of inter-ion Coulomb interaction which renders a correlated ground state with short-range order of the partially ionised resonant donors. Possible mechanisms for a decrease of both the mobility and the EPR intensity for very high iron concentrations in this ordered, glass-like state are discussed.
| Original language | English |
|---|---|
| Article number | 058 |
| Pages (from-to) | S266-S269 |
| Journal | Semiconductor Science and Technology |
| Volume | 5 |
| Issue number | 3 S |
| DOIs | |
| Publication status | Published - 1990 |