Electron emission yield from thin Al and insulating layers induced by 3 MeV He2+ and 3 keV electron impact

M. Steinbatz, A. Schinner, E. Steinbauer, O. Benka

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7 Citations (Scopus)


The kinetic electron yield was measured for the impact of 3 MeV He2+ ions and 3 keV electrons on thin layers of Al on Cu, of Al2O3 on Al, and of CeO2 and CaF2 on Si backings. The dependence of the yield on the layer thickness was determined. For Al on Cu a decreasing yield was observed for increasing Al layer thickness, since the yield of Cu is higher than that of Al. For insulating layers increasing yields were measured for increasing layer thickness. The observed yield dependencies were fitted by sums of exponential functions. The characteristic lengths of the exponential terms were interpreted as emission lengths. For Al and the metal oxides a small emission length in the range of 2-3 nm was found, for CeO2 and electron impact on Al a second exponential term with a large emission length, 20-100 nm, was necessary to describe the measured yield dependence, which is probably due to backscattered projectile electrons and δ-electrons. The Al results are compared with computer simulations. The increasing yield of CaF2 layers could be fitted by a function with only one exponential term and an emission length of 10.8 nm for He impact and 20.6 nm for electron impact.

Original languageEnglish
Pages (from-to)638-644
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - Jun 2002
Externally publishedYes


  • Electron emission yield
  • Kinetic electron emission


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