Comparative study of the SbGa heteroantisite and off-center OAs in GaAs

B. Bohl; M. Kunzer; F. Fuchs; G. Hendorfer; U. Kaufmann

doi:10.1103/PhysRevB.46.10450

Comparative study of the SbGa heteroantisite and off-center OAs in GaAs

B. Bohl^*, M. Kunzer, F. Fuchs, G. Hendorfer, U. Kaufmann

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The (0/+) donor level of the SbGa heteroantisite and the off-center OAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deep-level transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbGa level is nevertheless possible if additional quantitative information about SbGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.

Original language	English
Pages (from-to)	10450-10452
Number of pages	3
Journal	Physical Review B
Volume	46
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.46.10450
Publication status	Published - 1992
Externally published	Yes

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title = "Comparative study of the SbGa heteroantisite and off-center OAs in GaAs",

abstract = "The (0/+) donor level of the SbGa heteroantisite and the off-center OAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deep-level transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbGa level is nevertheless possible if additional quantitative information about SbGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.",

author = "B. Bohl and M. Kunzer and F. Fuchs and G. Hendorfer and U. Kaufmann",

year = "1992",

doi = "10.1103/PhysRevB.46.10450",

language = "English",

volume = "46",

pages = "10450--10452",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

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T1 - Comparative study of the SbGa heteroantisite and off-center OAs in GaAs

AU - Bohl, B.

AU - Kunzer, M.

AU - Fuchs, F.

AU - Hendorfer, G.

AU - Kaufmann, U.

PY - 1992

Y1 - 1992

N2 - The (0/+) donor level of the SbGa heteroantisite and the off-center OAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deep-level transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbGa level is nevertheless possible if additional quantitative information about SbGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.

AB - The (0/+) donor level of the SbGa heteroantisite and the off-center OAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deep-level transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbGa level is nevertheless possible if additional quantitative information about SbGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.

UR - https://www.scopus.com/pages/publications/35949005007

U2 - 10.1103/PhysRevB.46.10450

DO - 10.1103/PhysRevB.46.10450

M3 - Article

AN - SCOPUS:35949005007

SN - 0163-1829

VL - 46

SP - 10450

EP - 10452

JO - Physical Review B

JF - Physical Review B

IS - 16

ER -

Comparative study of the SbGa heteroantisite and off-center OAs in GaAs

Abstract

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