Comparative study of the SbGa heteroantisite and off-center OAs in GaAs

B. Bohl, M. Kunzer, F. Fuchs, G. Hendorfer, U. Kaufmann

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2 Citations (Scopus)


The (0/+) donor level of the SbGa heteroantisite and the off-center OAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deep-level transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbGa level is nevertheless possible if additional quantitative information about SbGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.

Original languageEnglish
Pages (from-to)10450-10452
Number of pages3
JournalPhysical Review B
Issue number16
Publication statusPublished - 1992
Externally publishedYes


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