Characterization of highly crystalline C60 thin films and their field-effect mobility

Transistors fabricated from C₆₀ films grown by hot wall epitaxy at elevated substrate temperature of 250°C, show charge carrier mobility of ∼6 cm²/Vs. When grown at substrate temperature of 25°C, mobilities of only 0.6-1 cm²/Vs are obtained. The C₆₀ films were characterized using grazing-incidence X-ray diffraction and show increased crystalline properties when grown at elevated substrate temperature. The improvement in the charge carrier mobility is attributed to the higher crystalline nature of the thin films