Characterization of highly crystalline C60 thin films and their field-effect mobility

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Abstract

Transistors fabricated from C60 films grown by hot wall epitaxy at elevated substrate temperature of 250°C, show charge carrier mobility of ∼6 cm2/Vs. When grown at substrate temperature of 25°C, mobilities of only 0.6-1 cm2/Vs are obtained. The C60 films were characterized using grazing-incidence X-ray diffraction and show increased crystalline properties when grown at elevated substrate temperature. The improvement in the charge carrier mobility is attributed to the higher crystalline nature of the thin films

Original languageEnglish
Pages (from-to)3845-3848
Number of pages4
JournalPHYSICA STATUS SOLIDI B-BASIC RESEARCH
Volume244
Issue number11
DOIs
Publication statusPublished - Nov 2007

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