Characterization of deep levels in CdTe by photo-EPR and related techniques

W. Jantsch; G. Hendorfer

doi:10.1016/0022-0248(90)91004-A

Characterization of deep levels in CdTe by photo-EPR and related techniques

W. Jantsch^*
, G. Hendorfer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

Original language	English
Pages (from-to)	404-413
Number of pages	10
Journal	Journal of Crystal Growth
Volume	101
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(90)91004-A
Publication status	Published - 1 Apr 1990
Externally published	Yes

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abstract = "In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.",

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AU - Hendorfer, G.

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N2 - In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

AB - In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

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DO - 10.1016/0022-0248(90)91004-A

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SP - 404

EP - 413

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Characterization of deep levels in CdTe by photo-EPR and related techniques

Abstract

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