Characterization of deep levels in CdTe by photo-EPR and related techniques

W. Jantsch, G. Hendorfer

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)

Abstract

In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

Original languageEnglish
Pages (from-to)404-413
Number of pages10
JournalJournal of Crystal Growth
Volume101
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 1990
Externally publishedYes

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