CCD camera-based analysis of thin film growth in industrial PACVD processes

Research output: Chapter in Book/Report/Conference proceedingsConference contribution


In this paper we present a method for the characterization of (semi-transparent) thin film growth during PACVD processes (plasma assisted chemical vapour deposition), based on analysis of thermal radiation by means of nearinfrared imaging. Due to interference effects during thin film growth, characteristic emissivity signal variations can be observed which allow very detailed spatio-temporal analysis of growth characteristics (e.g. relative growth rates). We use a standard CCD camera with a near-infrared band-pass filter (center wavelength 1030 nm, FWHM 10nm) as a thermal imaging device. The spectral sensitivity of a Si-CCD sensor at 1μm is sufficient to allow the imaging of thermal radiation at temperatures above approx. 400 C, whereas light emissions from plasma discharges (which mainly occur in the visible range of the electromagnetic spectrum) barely affect the image formation.

Original languageEnglish
Title of host publicationOptical Measurement Systems for Industrial Inspection VIII
PublisherPabst Science Publishers
ISBN (Print)9780819496041
Publication statusPublished - 2013
EventSPIE Optical Metrology 2013 - Munich, Germany
Duration: 13 May 201316 May 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSPIE Optical Metrology 2013
Internet address


  • Emissivity
  • Interference
  • Optical metrology
  • Process monitoring
  • Thermography
  • Thin film


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