Strain characterization of Hg1-xFexSe-layers by electron spin resonance

G. Hendorfer, W. Jantsch, W. Helzel, J. H. Li, Z. Wilamowski, T. Widmer, D. Schikora, K. Lischka

Publikation: Beitrag in FachzeitschriftKonferenzartikelBegutachtung

3 Zitate (Scopus)


HgSe:Fe layers are grown by molecular-beam-epitaxy and investigated by high-resolution-x-ray-diffraction and electron paramagnetic resonance. The lattice mismatch between HgSe and ZnTe leads to the formation of strain in the HgSe layers which is, however, relaxed in all samples investigated. Nevertheless, by Electron paramagnetic resonance a strain field in HgSe is found which occurs due to the difference in the thermal expansion coefficients of ZnTe and HgSe, respectively. We thus show that iron can be used as a local probe to measure strains in HgSe. We correlate the fine structure parameter necessary to describe the EPR spectra with the strain in the layers.

Seiten (von - bis)561-566
FachzeitschriftMaterials Science Forum
Ausgabenummerpt 1
PublikationsstatusVeröffentlicht - 1995
Extern publiziertJa
VeranstaltungProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Dauer: 23 Juli 199528 Juli 1995


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