TY - GEN
T1 - Simulation of plasma resonances in MOSFETs for THz-signal detection
AU - Jungemann, Christoph
AU - Bittner, K.
AU - Brachtendorf, H. G.
PY - 2016/3/23
Y1 - 2016/3/23
N2 - We present simulations by the 2D drift-diffusion model of a quarter-micron NMOSFET at THz frequencies. The derivative of the current densities with respect to time is included in the model, which enables simulations of plasma oscillations. In contrast to the usual 1D transmission line models this approach includes all 2D effects of the device (parasitics, inhomogeneous channel, etc.). In the case of silicon the impact of plasma oscillations is found to be negligible due to the strong damping. With respect to numerics it is found that the backward differentiation formula based on trigonometric functions is very efficient for simulation of the periodic steady-state.
AB - We present simulations by the 2D drift-diffusion model of a quarter-micron NMOSFET at THz frequencies. The derivative of the current densities with respect to time is included in the model, which enables simulations of plasma oscillations. In contrast to the usual 1D transmission line models this approach includes all 2D effects of the device (parasitics, inhomogeneous channel, etc.). In the case of silicon the impact of plasma oscillations is found to be negligible due to the strong damping. With respect to numerics it is found that the backward differentiation formula based on trigonometric functions is very efficient for simulation of the periodic steady-state.
UR - http://www.scopus.com/inward/record.url?scp=84966318782&partnerID=8YFLogxK
U2 - 10.1109/ULIS.2016.7440049
DO - 10.1109/ULIS.2016.7440049
M3 - Conference contribution
AN - SCOPUS:84966318782
T3 - 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
SP - 48
EP - 51
BT - 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
Y2 - 25 January 2016 through 27 January 2016
ER -