Abstract
CZ Si implanted with Er shows the same cubic crystal field splitting of the 1.54 μm luminescence as FZ-Si together with other, defect- and oxygen correlated Er complexes. The cubic centers exhibit somewhat shorter radiative life- and excitation times. The 100 times higher luminescence yield of CZ samples is thus attributed to the improved incorporation and to the passivation of recombination centers. The latter conclusion is supported by DLTS results which indicate complicated annealing behaviour.
Originalsprache | Englisch |
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Seiten (von - bis) | 609-614 |
Seitenumfang | 6 |
Fachzeitschrift | Materials Science Forum |
Jahrgang | 196-201 |
Ausgabenummer | pt 2 |
DOIs | |
Publikationsstatus | Veröffentlicht - 1995 |
Extern publiziert | Ja |
Veranstaltung | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Dauer: 23 Juli 1995 → 28 Juli 1995 |