Abstract
The temperature and concentration dependence of the EPR absorption due to the Fe3+ state in HgSe is shown to be consistent with a Coulomb gap in the defect density of states. The latter is a consequence of inter-ion Coulomb interaction which renders a correlated ground state with short-range order of the partially ionised resonant donors. Possible mechanisms for a decrease of both the mobility and the EPR intensity for very high iron concentrations in this ordered, glass-like state are discussed.
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 058 |
| Seiten (von - bis) | S266-S269 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 5 |
| Ausgabenummer | 3 S |
| DOIs | |
| Publikationsstatus | Veröffentlicht - 1990 |
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