Characterization of deep levels in CdTe by photo-EPR and related techniques

W. Jantsch; G. Hendorfer

doi:10.1016/0022-0248(90)91004-A

Characterization of deep levels in CdTe by photo-EPR and related techniques

W. Jantsch^*
, G. Hendorfer

^*Korrespondierende/r Autor/-in für diese Arbeit

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

58 Zitate (Scopus)

Abstract

In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

Originalsprache	Englisch
Seiten (von - bis)	404-413
Seitenumfang	10
Fachzeitschrift	Journal of Crystal Growth
Jahrgang	101
Ausgabenummer	1-4
DOIs	https://doi.org/10.1016/0022-0248(90)91004-A
Publikationsstatus	Veröffentlicht - 1 Apr. 1990
Extern publiziert	Ja

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10.1016/0022-0248(90)91004-A

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title = "Characterization of deep levels in CdTe by photo-EPR and related techniques",

abstract = "In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.",

author = "W. Jantsch and G. Hendorfer",

year = "1990",

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doi = "10.1016/0022-0248(90)91004-A",

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AU - Jantsch, W.

AU - Hendorfer, G.

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N2 - In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

AB - In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

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U2 - 10.1016/0022-0248(90)91004-A

DO - 10.1016/0022-0248(90)91004-A

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EP - 413

JO - Journal of Crystal Growth

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IS - 1-4

ER -

Characterization of deep levels in CdTe by photo-EPR and related techniques

Abstract

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