TY - JOUR
T1 - Characterization of deep levels in CdTe by photo-EPR and related techniques
AU - Jantsch, W.
AU - Hendorfer, G.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1990/4/1
Y1 - 1990/4/1
N2 - In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.
AB - In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.
UR - http://www.scopus.com/inward/record.url?scp=0025412799&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(90)91004-A
DO - 10.1016/0022-0248(90)91004-A
M3 - Article
AN - SCOPUS:0025412799
SN - 0022-0248
VL - 101
SP - 404
EP - 413
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -