Characterization of deep levels in CdTe by photo-EPR and related techniques

W. Jantsch, G. Hendorfer

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

48 Zitate (Scopus)

Abstract

In photo-EPR, the EPR signature of microscopically identifiable defects is used to monitor light-induced electronic transitions. In this paper we summarize photo-EPR investigations of group IV donors, 3d transition metal impurities and complexes in CdTe. Energy levels and Huang-Rhys factors are derived for the 3d impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR. Comparison with results for other II-VI compounds confirm host-independent relative zero-phonon level positions for different 3d metal impurities and large lattice relaxation energies.

OriginalspracheEnglisch
Seiten (von - bis)404-413
Seitenumfang10
FachzeitschriftJournal of Crystal Growth
Jahrgang101
Ausgabenummer1-4
DOIs
PublikationsstatusVeröffentlicht - 1 Apr 1990
Extern publiziertJa

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